Publicaciones

  1. J. S. Romero, D. Verdier, L. M. Prócel and L. Trojman, Implementation and Optimization of the Algorithm of Automatic Color Enhancement in Digital Images, ROPEC, 2017, Ixtapa, Mexico (accepted).
  2. E. Garzon, F. Chávez, D. Jaramillo, L. Sánchez, S. Lara, C. Macías, L.-M. Procel, E. Sicard and L. Trojman, “Microprocessor Design with a Direct Bluetooth Connection in 45nm Technology Using Microwind”, IEEE Transaction on Latin America, Septembre 2017 (En révision).
  3. D. Benalcazar, E. Garzón and L. Trojman, “Capacitance Extraction of 34-nm Channel Length MOSFET for Parasitic Assessment Using the RFCV Technique” IEEE Transaction on Latin America, Septembre 2017 (En révision).
  4. . S. Torres, T. Reytier and L. Trojman, “A comparative Study of DFT Methods to Semiconductor Materials”, IEEE Transaction on Latin America, Juin 2017 (En révision).
  5. J. Romero, D. Verdier, R. Pazmiño, L.-M. Procel et L. Trojman, “Implementing Optical Flow in Digital Images”, IEEE Sensor Journal, Octobre 2017 (En revision).
  6. L. Trojman, D. R. Benalcazar, G. Jobard and L. M. Prócel, “Mobility Extraction for 24-nm-channel Length n-MOS Using the RFCV Technique: Effect of the Fabrication Process”, ROPEC, 2017, Ixtapa, Mexico (accepted).
  7. S. Guitarra, L. Trojman, and L. Raymond, “Model for Resistive Switching in bipolar Hf-based Memories”, IUPAP International Conference on Women in Physics (ICWP), Birmingham, UK, 2017.
  8. E. Acurio, F. Crupi, P. Magnone, L. Trojman, F. Iucolano, “Impact of AlN layer sandwiched between the GaN and the Al2O3 layers on the performance and reliability of recessed AlGaN/GaN MOS-HEMTs”, Microelectronic Engineering Vol. 178, 25 June 2017, Pages 42-47.
  9. E. Acurio, F. Crupi, P. Magnone, L. Trojman, G. Meneghesso, F. Iucolano, “On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT”, Solid-State Electronics, Vol. 132, 1 June 2017, Pages 49-56.
  10. L. Trojman, S. Guitarra, L. M. Prócel , L. Raymond, Study of the scaling and the temperature for RERAM cells using the QPC model, IEEE Transaction on Latin America, Vol. 14, N. 12, Dec. 2016, pp. 4693 – 4698
  11. 11. L. M. Prócel, F. Crupi, L. Trojman, J. Franco, B. Kaczer, “A Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs”, IEEE, Transactions on Device and Materials Reliability, Vol. 16, n. 1, pp. 98 - 100 March 2016
  12. E. Garzón, F. Sanchez, L.-M. Prócel and L. Trojman, “Remote control of VNA and parameter analyzer for RFCV measurements using Python”, ANDESCON, 2016 IEEE, Arequipa, Peru 2016.
  13. L. Trojman, J. S. Acosta, M. Ortega, L.-M. Prócel, “Statistical study of SiON short MOSFET under Channel Hot Carrier stress”, ANDESCON, 2016 IEEE, Arequipa, Peru 2016.
  14. L.M. Prócel, L. Trojman and F. Crupi, “Temperature study of defect generation, under channel hot carrier stress for 35-nm gate length MOSFETs using the Defect-Centric perspective”, ANDESCON, 2016 IEEE, Arequipa Peru 2016.
  15. J. Franco; B. Kaczer, S. Mukhopadhyay, P. Duhan, P. Weckx, Ph. J. Roussel, T. Chiarella, L. -Å Ragnarsson, L. Trojman, N. Horiguchi, A. Spessot, D. Linten, A. Mocuta, “Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs , 2016 IEEE International Electron Devices Meeting (IEDM), 15.3.1 - 15.3.4, CA (USA), 2016.
  16. L. Trojman, Study of Mobility for HfO2 dielectric FDSOI-UTTB pMOS under substrate biases, IEEE Transaction on Latin America, Vol. 14, N. 10, Oct. 2016, pp. 4235 – 4240
  17. E. Acurio, F. Crupi, P. Magnone, L. Trojman, F. Iucolano, “Impact of AlN layer sandwiched between the GaN and the Al2O3 layers on the performance and reliability of recessed AlGaN/GaN MOS-HEMTs”, 20th conference on Insulator Semiconductor Film On Semiconductor (INFOS), Udine (Italy) 2015.
  18. L.M. Prócel, F. Crupi, J. Franco, L. Trojman, B. Kaczer, N. Wils, H. Tuinhout, “A Defect-Centric Perspective on Channel Hot Carrier Variability in nMOSFETs”, 19th conference on Insulator Semiconductor Film On Semiconductor (INFOS), Udine (Italy) 2015.
  19. L.M. Prócel, F. Crupi, J. Franco, L. Trojman, B. Kaczer, N. Wils, H. Tuinhout, “A Defect-Centric Perspective on Channel Hot Carrier Variability in nMOSFETs”, Microelectronic Engineering, 2015
  20. B. Kaczer, J. Franco, M. Cho, T. Grasser, Ph. J. Roussel, S. Tyaginov, M. Bina, Y. Wimmer, L. M. Prócel, L. Trojman, F. Crupi, G. Pitner, V. Putcha, P. Weckx, E. Bury, Z. Ji, A. De Keersgieter, T. Chiarella, N. Horiguchi, G. Groeseneken, A. Thean, “Origins and Implications of Increased Channel Hot Carrier Variability in nFinFETs”, International Reliability Physic Symposium,CA, USA (IRPS) 2015.
  21. L.Trojman, L.-A Rgnarsson and N. Collaert, “Mobility improvement study for 8Å-EOT HfO2 UTBB-FD-SOI-MOSFET based on the direct extraction of the back channel mobility”, IEEE, Transaction on Electron Device, nov. 2014.
  22. S. Guitarra, L. Trojman, “Modelo físico para entender el comportamiento de las memorias de acceso aleatorio resistivas ReRAM”, Congreso de la Sociedad Ecuatoriana de Física, Quito, Ecuador, 2014.
  23. L.M. Procel, F. Crupi,J. Franco, L. Trojman and B. Kaczer, “Defect-Centric Distribution of Channel Hot Carrier Degradation in Nano-MOSFETs”, IEEE Electron Device Letter, nov 2014
  24. F. Oviedo, L. Trojman, T. Kauerauf, E. Bonifaz, “Thermal –electrical Finite element analysis of Nanometric copper vias under high fluence stress”, Avances en Ciencias e Ingenierías, Diciembre 2013.
  25. J. Fraga, L. M. Procel, L. Trojman, J. Torres, “A DFT Study of the components of Hf/HfO2/TiN three layer stack”, Avances en Ciencias e Ingenierías, Vol.5, n. 2, diciembre 2013.
  26. L. M. Procel, J. Moreno, F. Crupi, L. Trojman, “Mobility extraction in ultra-thin body buried oxide and fully depleted SOI MOSFET”, Avances en Ciencias e Ingenierías, Vol. 5, n. 1, Junio 2013.
  27. L.M. Procel, L. Trojman, J. Moreno, F. Crupi, V. Maccaronio, R. Degraeve, L. Goux, E. Simoen, “Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories”, Journal of Applied Physics, Vol. 114, n. 7, 2013.
  28. V. Maccaronio, F. Crupi, L.M. Prócel, L. Goux, E. Simoen, L. Trojman, E. Miranda, DC and low-frequency noise behavior of the conductive filament in bipolar HfO2-based resistive Random Access Memory”, Microelectronic Engineering, Volume 107, July 2013, Pages 1–5.
  29. J. Artieda, L. Trojman, F. Crupi, L.-A. Ragnarsson, “Caracterización eléctrica de nano-MOSFET’s en tecnología SOI”, Avances en Ciencias e Ingenierías, Vol. 4, n. 2 diciembre 2012.
  30. J. Bustamante, L. Trojman, “Ultra-Thin Depleted Silicon on Insulator MOSFET: S simulation based on COMSOL Multiphysics”, Avances en Ciencias e Ingenierías, Vol. 4, n. 1, Julio 2012.
  31. L. Trojman, L. Pantisano, L.-A. Ragnarsson “High-Field Transport Investigation for 25-nm MOSFETs with 0.64-nm EOT: Intrinsic Performance and Parasitic Effects”, IEEE. Transaction on electron devices, Vol. 59, n. 7, Julio 2012
  32. L.-Å. Ragnarsson, J. Mitard, T. Kauerauf, A. De Keersgieter, T. Schram, E. Röhr, N. Collaert, M. Jurczak, S.-H. Hong, J. Tseng, W.-E. Wang, L. Trojman, K.K. Bourdelle, B.-Y. Nguyen, P. Absil and T. Y. Hoffmann,”On the Origin of Mobility Reduction in Bulk-Si, UTBOX-FDSOI and SiGe Devices with Ultrathin-EOT dielectric”, Symposium on Very-Large-Scale-Integration-Technology System and Application (VLSI-TSA), Tai-Peh, Taiwan, April 2011.
  33. L.-Å. Ragnarsson, J. Mitard, S.-H. Hong, S. Takeoka, J. Tseng, W. Wang, S. Yamaguchi, L. Trojman, T. Kauerauf, A. De Keersgieter, T. Schram, E. Röhr, N. Collaert, M. Jurczak, K. K. Bourdelle, B.-Y. Nguyen, P. Absil and T. Y. Hoffmann, “On the Origin of Mobility Reduction in Ultrathin EOT HK/MG CMOS devices: Impact from Gate-Stack and Device Architecture”, International Workshops on Dielectric Thin Film for Future Electron Device (IWDTF), Tokyo, Japan, January 2011.
  34. L. Trojman, et al., “Experimental Investigation of the Electronic Transport for Nanometric High-k/MG MOSFET and Performances”, 1ST International Nanotechnology congress, Ecuador June 2010.
  35. L. Trojman, J. Bustamante, L. Pantisano and S. Navarro, “EOT Sub-nanométrico y degradación de la movilidad: ¿Hacia una Limitación Física de las Técnicas de Fabricación Modernas?”, Avances, Sección Ciencias e Ingenierías, Vol.2, n.2, Junio 2010.
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